View F7338_39761.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www..com
PD - 94372C
IRF7338
HEXFET(R) Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
D1 D1
N-Ch VDSS 12V
P-Ch -12V
3
6
D2 D2
4
5
P-CHANNEL MOSFET
RDS(on) 0.034 0.150
Top View
Description
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 -55 to + 150 8.0 P-Channel -12 -3.0 -2.5 -13
Units
A
W mW/C V C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 62.5
Units
C/W
www.irf.com
1
6/2/03
www..com
IRF7338
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 12 -12 -- -- -- -- -- -- 0.6 -0.40 9.2 3.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- 0.01 -0.01 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 Max. -- -- -- -- 0.034 0.060 0.150 0.200 1.5 -1.0 -- -- 20 -1.0 50 -25 100 100 8.6 6.6 1.9 1.3 3.9 1.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 3.0V, ID = 2.0A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 6.0V, ID = 6.0A VDS = -6.0V, ID = -1.5A VDS = 9.6V, VGS = 0V VDS = -9.6 V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 55C VDS = -9.6V, VGS = 0V, TJ = 55C VGS = 12V VGS = 8.0V N-Channel ID = 6.0A, VDS = 6.0V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -9.6V, VGS = -4.5 V N-Channel VDD = 6.0V, ID = 1.0A, RG = 6.0, VGS = 4.5V P-Channel VDD = -6.0V, ID = -2.9A, RG = 6.0, VGS = -4.5V pF N-Channel VGS = 0V, VDS = 9.0V, = 1.0MHz P-Channel VGS = 0V, VDS = -9.0V, = 1.0KHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
ns
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 6.3 -- -- -3.0 A -- -- 26 -- -- -13 -- -- 1.3 TJ = 25C, IS = 1.7A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -2.9A, VGS = 0V -- 51 76 N-Channel ns -- 37 56 TJ = 25C, IF = 1.7A, di/dt = 100A/s -- 43 64 P-Channel nC TJ = 25C, IF = -2.9A, di/dt = -100A/s -- 20 30
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Pulse width 400s; duty cycle 2%.
Surface mounted on 1 in square Cu board. The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
2
www.irf.com
www..com
N-Channel
IRF7338
VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP
100
10
1
1.5V
0.1
1
1.5V
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100.0
ID, Drain-to-Source Current ( A)
T J = 25C T J = 150C
10
ISD, Reverse Drain Current (A)
T J = 150C 10.0
1.0 T J = 25C VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4
1 1.0 2.0
VDS = 10V 20s PULSE WIDTH
3.0 4.0
0.1
VGS , Gate-to-Source Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
www.irf.com
3
www..com
IRF7338
2.0
N-Channel
I D = 6.3A
R DS (on) , Drain-to-Source On Resistance ( )
0.12
0.10
RDS(on) , Drain-to-Source On Resistance
1.5
0.08
(Normalized)
VGS = 3.0V
1.0
0.06 VGS = 4.5V
0.04
0.5
0.02
V GS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.00 0 5 10 15 20 25 30 ID , Drain Current (A)
TJ , Junction Temperature
( C)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain Current
RDS(on) , Drain-to -Source On Resistance ( )
0.05
80
60
0.04
Power (W)
0.03
40
ID = 6.3A
20
0.02 3.0 4.0 5.0 6.0 7.0 8.0
0 0.00 0.00 0.00 0.01 0.10 1.00 10.00
VGS, Gate -to -Source Voltage (V)
Time (sec)
Fig 7. Typical On-Resistance Vs. Gate Voltage
Fig 8. Typical Power Vs. Time
4
www.irf.com
www..com
N-Channel
IRF7338
12 ID= 6.0A
1000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds
800
10 8 6 4 2 0
VDS= 12V
C, Capacitance (pF)
Ciss
600
Coss
400
200
Crss
0 1 10 100
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
D = 0.50
(Z thJA)
0.20 10 0.10
Thermal Response
0.05
0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TA 1 10
J = P DM x Z thJA
0.1 0.00001
0.0001
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
www..com
IRF7338
7.0
N-Channel
VDS
6.0
RD
VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
5.0
ID , Drain Current (A)
-VDD
4.0
3.0
2.0
Fig 13a. Switching Time Test Circuit
VDS 90%
1.0
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
Fig 12. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 13b. Switching Time Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
VGS
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com
www..com
P-Channel
IRF7338
VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP
100
-I D, Drain-to-Source Current (A)
10
-I D, Drain-to-Source Current (A)
VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP
100
10
-1.5V
1
-1.5V
1
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 15. Typical Output Characteristics
Fig 16. Typical Output Characteristics
100
100.0
-I D, Drain-to-Source Current ( A)
-I SD, Reverse Drain Current (A)
10.0 T J = 150C
10
T J = 25C T J = 150C
1.0 T J = 25C
1 1.0 2.0
VDS = -10V 20s PULSE WIDTH
3.0 4.0
0.1 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6
-V GS , Gate-to-Source Voltage (V)
-V SD, Source-toDrain Voltage (V)
Fig 17. Typical Transfer Characteristics
Fig 18. Typical Source-Drain Diode Forward Voltage
www.irf.com
7
www..com
IRF7338
2.0
P-Channel
I D = -3.0A
RDS (on) , Drain-to-Source On Resistance ( )
0.20 0.18 0.16 0.14 0.12 0.10 VGS = -4.5V 0.08 0.06 0 2 4 6 8 10 12 14 -I D , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
1.5
(Normalized)
1.0
VGS = -2.7V
0.5
V GS = -4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature
( C)
Fig 19. Normalized On-Resistance Vs. Temperature
Fig 20. Typical On-Resistance Vs. Drain Current
RDS(on) , Drain-to -Source On Resistance ( )
0.12
80
60
0.10
Power (W)
0.08
40
ID = -3.0A
20
0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0 0.00 0.00 0.00 0.01 0.10 1.00 10.00
-V GS, Gate -to -Source Voltage (V)
Time (sec)
Fig 21. Typical On-Resistance Vs. Gate Voltage
Fig 22. Maximum Avalanche Energy Vs. Drain Current
8
www.irf.com
www..com
P-Channel
800
IRF7338
ID= -2.9A
-V GS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd
12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V
600
C, Capacitance (pF)
Ciss
400
200
Coss Crss
0 1 10 100
0
2
4
6
8
10
- -V DS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 23. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 24. Typical Gate Charge Vs. Gate-to-Source Voltage
100
D = 0.50
(Z thJA)
0.20 10 0.10
Thermal Response
0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 +TA 1 10
J = P DM x Z thJA
t 1, Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
9
www..com
IRF7338
3.0
VDS
2.4
RD
VGS RG
D.U.T.
+
-I D , Drain Current (A)
1.8
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.2
Fig 27a. Switching Time Test Circuit
0.6
td(on)
tr
t d(off)
tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
Fig 26. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 27b. Switching Time Waveforms
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 28a. Basic Gate Charge Waveform
Fig 28b. Gate Charge Test Circuit
10
www.irf.com
+
D.U.T.
VDS
-
VDD
-
www..com
IRF7338
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) Y = LAS T DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER
11
INT ERNAT IONAL RECT IFIER LOGO
www.irf.com
YWW XXXX F7101
www..com
IRF7338
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/03
12
www.irf.com

▲Up To Search▲

Price & Availability of F7338

	To Download F7338 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .